Micron Unveils Memory Roadmap: A New HBM Generation Every Year Through 2030; 1δ Node to Ramp in Late 2027
Micron Technology laid out its next-generation memory roadmap at a technology webinar on October 21: high-bandwidth memory will advance one generation per year — HBM4 is already in high-volume production at 2.8 TB/s per stack, HBM4E is sampling to key customers, and the company targets HBM4E in volume in 2027, followed by HBM5 in 2028, HBM5E in 2029 and HBM6 in 2030. Chief Technology Officer Scott DeBoer presented the roadmap at the event.
The roadmap also includes vHBM, a new stacking approach that places HBM vertically on top of the compute die and eliminates the interposer, and vEIM, an edge-inference design targeting about 2 TB/s per stack at under 1 picojoule per bit. On the DRAM process side, the 1δ (1-delta) node is slated to ramp in the second half of 2027 with bit density more than 20% above the 1γ node; it will underpin DDR6, with more than twice the theoretical bandwidth of DDR5, and LPDDR6, with power efficiency more than 35% better than LPDDR5. For server memory, 512GB DDR5 RDIMMs are sampling and a 1TB RDIMM is in development.
On NAND, Micron's next G11 node will exceed 400 layers, with roughly twice the bit density of G9, about 1.5 times the I/O speed and more than 25% less energy per data transfer, using wafer-to-wafer bonding, with a ramp planned for the second half of 2027. Asked about the 4F² cell architecture discussed in the industry, DeBoer told Nikkei Asia that it is not on Micron's roadmap and that its density advantage is "a bit of a myth."
Micron ranks No. 5 in GSM's Global Chip Company Rankings on 2025 revenue of $41.5 billion, up 50.2%. In Q2 2026 TrendForce data, Micron held a 23.3% share of DRAM revenue, third globally, and about 18% of HBM revenue.
Published by GSM · USA (original Chinese edition)
Photo: 图：DDR4 内存条（DRAM 存储芯片）资料图。照片：PantheraLeo1359531，CC BY 4.0，经 Wikimedia Commons。Photo: A DDR4 memory module (file photo). Photo: PantheraLeo1359531, CC BY 4.0, via Wikimedia Commons.
